(Hong Kong)
Product Summary
The ISSI IS61LV25616AL is a high-speed, 4,194,304-bit
static RAM organized as 262,144 words by 16 bits. It is
fabricated using ISSI's high-performance CMOS technology.
This highly reliable process coupled with innovative
circuit design techniques, yields high-performance and low
power consumption devices.
When CE is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be reduced
down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs, CE and OE. The active LOW
Write Enable (WE) controls both writing and reading of the
memory. A data byte allows Upper Byte (UB) and Lower
Byte (LB) access.
The IS61LV25616AL is packaged in the JEDEC standard
44-pin 400-mil SOJ, 44-pin TSOP Type II, 44-pin LQFP
and 48-pin Mini BGA (8mm x 10mm).
Features
High-speed access time:
— 10, 12 ns
CMOS low power operation
Low stand-by power:
— Less than 5 mA (typ.) CMOS stand-by
TTL compatible interface levels
Single 3.3V power supply
Fully static operation: no clock or refresh required
Three state outputs
Data control for upper and lower bytes
Industrial temperature available
Lead-free available
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 IS61LV25616AL-10TLI |
ISSI |
SRAM 4Mb 256Kx16 10ns Async SRAM 3.3v |
Data Sheet |
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IS61LV25616AL-10TLI-TR |
ISSI |
SRAM 4Mb 256Kx16 10ns Async SRAM 3.3v |
Data Sheet |
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